FDC6401N
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC6401N
Datasheet:
Description:
MOSFETs SOT-23-6 SMD/SMT N-Channel number of channels:2 960 mW 20 V Continuous Drain Current (ID):3 A 4.6 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 3 mm |
| Width | 1.7 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 70 MΩ |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.036 g |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 3 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 960 mW |
| Power Dissipation | 960 mW |
| Threshold Voltage | 900 mV |
| Number of Channels | 2 |
| Input capacitance | 324 pF |
| Continuous Drain Current (ID) | 3 A |
| Rds On Max | 70 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 13 ns |
| Element Configuration | Dual |
| Rise Time | 7 ns |
| Dual Supply Voltage | 20 V |
| Gate Charge | 4.6 nC |
| Drain to Source Resistance | 70 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 900 mV |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 500 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 495
Distributors
pcbx
pcbxUnit Price$0.43315
Ext.Price$0.43315
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.43315 | $0.43315 |
| 10 | $0.34234 | $3.42340 |
| 25 | $0.31120 | $7.78000 |
| 50 | $0.28289 | $14.14450 |
| 100 | $0.25715 | $25.71500 |
| 300 | $0.24620 | $73.86000 |
| 500 | $0.23571 | $117.85500 |
| 1000 | $0.22194 | $221.94000 |